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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3060 2SK3060-S 2SK3060-ZJ 2SK3060-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
* Low on-state resistance RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 m MAX. (VGS = 4.0 V, ID = 35 A) * Low Ciss: Ciss = 2400 pF TYP. * Built-in gate protection diode
Note This package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1
(TO-220AB) 60 20 +20, -10 70 210 70 1.5 150 -55 to +150 35 122.5 V V V A A W W C C A mJ (TO-262)
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 5 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 V 0 V (TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13099EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1997,2000
2SK3060
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 35 A VGS = 4.0 V, ID = 35 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 35 A VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 35 A VGS = 10 V VDD = 30 V RG = 10 ID = 70 A VDD = 48 V VGS = 10 V IF = 70 A, VGS = 0 V IF = 70 A, VGS = 0 V di/dt = 100 A / s 2400 700 280 30 600 140 450 50 7.5 18 1.0 55 75 1.0 15 MIN. TYP. 11 16 1.5 50 10 10 MAX. 13 20 2.0 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS 50 L VDD
5 TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90% 90%
VGS VGS
Wave Form
90%
0
10%
IAS ID VDD
VGS 0 = 1 s Duty Cycle 1%
ID ID
Wave Form
0 10%
10%
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D13099EJ3V0DS
2SK3060
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
25 50 75 100 125 150 175 200
100 80 60 40 20
120 100 80 60 40 20 0 25 50 75 100 125 150 175 200
0
TC - Case Temperature - C
TC - Case Temperature - C
5
1000
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
100
R
( DS o n)
Lim
i
(@ ted
V
GS
=1
0V
)
ID(pulse)=210 A P W
10 10
0m
on
=1
1m ms
0
0
DC
Dis
10
sip
s
s
s
s
10
ati
ID(DC)=70 A
Lim
ite
d
1.0 TC = 25C 0.1 Single Pulse 1.0 0.1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10000
rth(t) - Transient Thermal Resistance - C/W
1000
100
Rth(ch-A)= 83.3 C/W
10 Rth(ch-C)= 1.79 C/W 1
0.1 0.01 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D13099EJ3V0DS
3
2SK3060
FORWARD TRANSFER CHARACTERISTICS 100
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 250
ID - Drain Current - A
10
ID - Drain Current - A
TA = 125C 75C 25C -25C
200 150 100 50 VGS = 10 V
1
VGS = 4.0 V
0.1 Pulsed VDS = 10 V 4 5
0
1
2
3
0
0.5
1.0
1.5
2.0
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
100 Tch = -25C 25C 75C 125C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed
10
20
1
10 ID = 35 A
0.1 0.1
VDS = 10 V Pulsed 1.0 10 100
0
10 VGS - Gate to Source Voltage - V
20
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 75 Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
2.0
VDS = 10 V ID = 1 mA
1.5
50
1.0
25 VGS = 4.0 V VGS = 10 V 0 0.1 1 10 100 1000
0.5
0
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D13099EJ3V0DS
2SK3060
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000
ISD - Diode Forward Current - A
Pulsed
40
100
30
VGS = 4.0 V
VGS = 10 V VGS = 0 V
20
10
10 V
10 ID = 35 A -50 0 50 100 150
1
0
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
Ciss Coss 1000 Crss
VGS = 0 V f = 1 MHz
10000
VDD = 30 V VGS = 10 V RG = 10
tr 1000 tf td(off) td(on)
100
100
10 0.1 1 10 100
10 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
18 40 VDD = 48 V 30 V 12 V VGS 16 14 30 20 VDS 10 12 10 8 6 4 2 0 20 40 60 80 0
100
10
1 0.1
1
10
100
IF - Drain Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100 A /s VGS = 0 V
ID = 70 A
Data Sheet D13099EJ3V0DS
5
2SK3060
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 160 IAS = 35 A 140
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 35 A
IAS - Single Avalanche Current - A
EAS
10
Energy Derating Factor - %
10 m
=1
22.
120 100 80 60 40 20
5m
J
1.0 RG = 25 VDD = 30 V VGS = 20 V 0 V Starting Tch = 25 C 0.1 10 100
1m
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13099EJ3V0DS
2SK3060
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
3.00.3 10.6 MAX. 10.0 5.9 MIN. 15.5 MAX. 4.8 MAX.
2)TO-262 (MP-25 Fin Cut)
1.00.5
3.60.2
4.8 MAX. 1.30.2
1.30.2
(10) 4
1
2
3
4 123 6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)TO-263 (MP-25ZJ)
(10) 4 4.8 MAX. 1.30.2
5
4)TO-220SMD (MP-25Z)
(10) 4
1.00.5
Note
4.8 MAX. 1.30.2
1.00.5
5.70.4
1.40.2 0.70.2 2.54 TYP. 1 2
(0
.5R
)
1.10.4
3.00.5
8.50.2
8.50.2
3 2.54 TYP.
(
R 0.8
)
1.40.2
0.50.2
1.00.3 2.54 TYP. 1 2
(0
) .5R 8R) . (0
0.50.2
3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate
Body Diode
Gate Protection Diode
Source
Data Sheet D13099EJ3V0DS
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
7
2SK3060
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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